2SD2704K / 2sd2705s t r ansistors 1/4 for muting (20v , 0.3a) 2SD2704K / 2sd2705s z f eatu r es 1) high dc current gain. h fe = 820 to 2700 2) high emitter-base volt age. v ebo = 25v (min.) 3) low ron ron= 0.7 ? (t y p .) z st r u c t u r e epit axial planar ty pe npn silicon transistor z ex te rna l dime ns ions (unit : mm) 2sd2705s 2SD2704K (1) emitter (2) collector (3) base rohm : spt eiaj : sc-72 0 to 0.1 2.8 0.2 1.6 0.3 to 0.6 1.1 0.8 0.1 0.15 0.4 2.9 0.2 1.9 0.2 0.95 0.95 + 0.2 ? 0.1 ? 0.1 + 0.2 + 0.1 ? 0.06 + 0.1 ? 0.05 (2) (1) (3) (1) emitter (2) base (3) collector rohm : smt3 eiaj : sc-59 abbreviated symbol: xl all terminals have same dimensions ? denotes h fe 3 0.2 (15min.) 4 0.2 2 0.2 0.45 0.5 0.45 5 (1) (2) (3) ? 0.05 + 0.15 + 0.15 ? 0.05 2.5 + 0.4 ? 0.1 3min. z a b solute maximum ratings (t a= 25 c) parameter v cbo v ceo v ebo i c p c tj tstg 50 v v v a w c c 20 25 0.3 0.2 0.3 150 ? 55 to + 150 symbol limits unit 2SD2704K 2sd2705s collector-base voltage collector-emitter voltage emitter-base voltage collector current collector power dissipation junction temperature storage temperature
2SD2704K / 2sd2705s t r ansistors 2/4 z electrical ch aracteristics (t a= 25 c) parameter symbol bv cbo bv ceo bv ebo i cbo i ebo v ce(sat) f t ? cob min. 50 20 25 ? ? ? ? ? ? ? ? ? ? 50 35 3.9 ? ? ? 0.1 0.1 100 ? ? v i c = 10 a i c = 1ma i e = 10 a v cb = 50v v eb = 25v i c /i b = 30ma/3ma v ce = 6v, i e = ? 4ma, f = 10mhz v cb = 10v, i e = 0a, f = 1mhz v v a a h fe 820 ? 2700 v ce = 2v, i c = 4ma ? mv mhz pf ron ? 0.7 ? i b = 5ma, vi = 100mv(rms), f = 1khz ? typ. max. unit conditions collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector cutoff current emitter cutoff current dc current transfer ratio collector-emitter saturation voltage transition frequency output capacitance output on-resistance ? measured using pulse current z packag in g sp ecificatio n s an d h fe package code t146 tp 3000 5000 ? ? taping basic ordering unit (pieces) 2SD2704K 2sd2705s type z electrical ch aracteristic cu rv es 0 0.2 0.4 0.6 0.8 1 1.2 0.1 0.1 10 100 1000 collector current : i c (ma) base to emitter voltage : v be(on) (v) fig.1 grounded emitter propagation characteristics ( ) v ce = 2v 25 c ? 40 c ta = 125 c collector current : i c (ma) fig.2 grounded emitter propagation characteristics ( ? ) 0 0.2 0.4 0.6 0.8 1 1.2 0.1 0.1 10 100 1000 base to emitter voltage : v be(on) (v) v ce = 6v 25 c ? 40 c ta = 125 c 1 1 0 100 1000 10 100 1000 10000 ta = ? 40 c ta = 25 c ta = 125 c dc current gain : h fe collector current : i c (ma) fig.3 dc current gain vs. collector current ( ) v ce = 2v
2SD2704K / 2sd2705s t r ansistors 3/4 dc current gain : h fe collector current : i c (ma) fig.4 dc current gain vs. collector current ( ) 1 1 0 100 1000 10 100 1000 10000 ta = ? 40 c ta = 25 c ta = 125 c v ce = 6v 1 1 0 100 1000 1 100 10 1000 10000 ta = ? 40 c ta = 25 c ta = 125 c collector current : i c (ma) i c /i b = 20/1 collector saturation voltage : v ce(sat) (mv) fig.6 collector-emitter saturation voltage vs. collector current ( ) 1 1 0 100 1000 1 100 10 1000 10000 ta = ? 40 c ta = 25 c ta = 125 c collector current : i c (ma) fig.5 collector-emitter saturation voltage vs. collector current ( ) i c /i b = 10/1 collector saturation voltage : v ce(sat) (mv) 1 1 0 100 1000 1 100 10 1000 10000 ta = ? 40 c ta = 25 c ta = 125 c collector current : i c (ma) i c /i b = 50/1 collector saturation voltage : v ce(sat) (mv) fig.7 collector-emitter saturation voltage vs. collector current ( ) fig.8 base-emitter saturation voltage vs. collector current ( ) 1 1 0 100 1000 100 1000 10000 ta = ? 40 c ta = 25 c ta = 125 c collector current : i c (ma) i c /i b = 10/1 base saturation voltage : v be(sat) (mv) fig.9 base-emitter saturation voltage vs. collector current ( ) collector current : i c (ma) base saturation voltage : v be(sat) (mv) 1 1 0 100 1000 100 1000 10000 ta = ? 40 c ta = 25 c ta = 125 c i c /i b = 20/1 fig.10 base-emitter saturation voltage vs. collector current ( ) collector current : i c (ma) base saturation voltage : v be(sat) (mv) 1 1 0 100 1000 100 1000 10000 ta = ? 40 c ta = 25 c ta = 125 c i c /i b = 50/1 fig.11 gain bandwidth product vs. emitter current 1 1 0 100 1 10000 ta = 25 c f = 50mhz i e = 0a emitter current : i e (ma) transition frequency : f t (mhz) fig.12 collector output capacitance vs. collector-base voltage emitter input capacitance vs. emitter-base voltage collector output capacitance : cob (pf) emitter input capacitance : cib (pf) collector to base voltage : v cb (v) emitter to base voltage : v eb (v) 1 1 0 100 0.1 1 10 100 ta = 25 c f = 1mhz i e = 0a
2SD2704K / 2sd2705s t r ansistors 4/4 0.01 0.1 1 100 10 0.1 1 100 10 fig.13 output-on resistance vs. base current ( ) ta = 25 c see fig.15 on resistance : ron ( ? ) base current : i b (ma) 0.01 0.1 1 100 10 0.1 1 100 10 fig.14 output-on resistance vs. base current ( ) ta = 25 c see fig.16 on resistance : ron ( ? ) base current : i b (ma) z ro n measu remen t circu i t ron = r l v 0 v 0 v i ? v 0 r l = 1k ? i b output input 100mv(rms) 1v(rms) f=1khz v i v fig.15 ron measurement circuit ( ) ron = r l v 0 v 0 v i ? v 0 r l = 1k ? i b output input 100mv(rms) 1v(rms) f=1khz v i v fig.16 ron measurement circuit ( )
appendix appendix1-rev1.1 the products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. notes no technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of rohm co.,ltd. the contents described herein are subject to change without notice. the specifications for the product described in this document are for reference only. upon actual use, therefore, please request that specifications to be separately delivered. application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. rohm co.,ltd. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by rohm co., ltd. is granted to any such buyer. products listed in this document are no antiradiation design. about export control order in japan products described herein are the objects of controlled goods in annex 1 (item 16) of export trade control order in japan. in case of export from japan, please confirm if it applies to "objective" criteria or an "informed" (by miti clause) on the basis of "catch all controls for non-proliferation of weapons of mass destruction.
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